www.irf.com 1 irf7809/IRF7811 parameter symbol irf7809 IRF7811 units drain-source voltage v ds 30 28 v gate-source voltage v gs 12 continuous drain or source t a = 25c i d 17.6 14 current (v gs 3 4.5v) t l = 90c 16.3 13 a pulsed drain current ? i dm 100 100 power dissipation t a = 25c p d 3.5 w t l = 90c 3.0 junction & storage temperature range t j , t stg C55 to 150 c continuous source current (body diode) i s 2.5 2.5 a pulsed source current ? i sm 50 50 ? n-channel application-specific mosfets ? ideal for cpu core dc-dc converters ? new copperstrap tm interconnect for lower electrical and thermal resistance ? low conduction losses ? low switching losses ? minimizes parallel mosfets for high current applications description these new devices employ advanced hexfet ? power mosfet technology to achieve an unprecedented balance of on-resistance and gate charge. the reduced conduction and switching losses make them ideal for high efficiency dc-dc converters that power the latest generation of mobile microprocessors. the irf7809/IRF7811 employs a new copperstrap tm interconnect technology pioneered by international rectifier to dramatically improve the electrial & thermal resistance contribution of the package. the new copperstrap so-8 power mosfets are capable of current ratings over 17a and power dissipation of 3.5w @ 25 c ambient conditions, thereby reducing the need for paralleled devices, improving efficiency and reliability and reducing board space. hexfet ? chipset for dc-dc converters irf7809 IRF7811 v ds 30v 28v r ds (on) 7.5 m w 11 m w q g 77.5 nc 23 nc q sw 23.9 nc 7 nc q oss 30 nc 31 nc absolute maximum ratings parameter max. units maximum junction-to-ambient ? r q ja 35 c/w maximum junction-to-lead r q jl 20 c/w thermal resistance device ratings top view 8 1 2 3 4 5 6 7 d d d d g s a s s a irf7809/IRF7811 provisional datasheet so-8 1/19/00 pd - 93812 pd - 93813
www.irf.com 2 irf7809/IRF7811 parameter min typ max min typ max units conditions diode forward v sd 1.0 1.0 v i s = 15a ? , v gs = 0v voltage* reverse recovery q rr 94 82 nc di/dt ~ 700a/s v ds = 16v, v gs = 0v, i s = 15a reverse recovery q rr(s) 87 74 di/dt = 700a/s charge (with parallel (with 10bq040) schottky) ? v ds = 16v, v gs = 0v, i s = 15a parameter min typ max min typ max units conditions drain-to-source bv dss 30 C C 28 C C v v gs = 0v, i d = 250a breakdown voltage* static drain-source r ds (on) 6 7.5 9 11 m w v gs = 4.5v, i d = 15a ? on resistance* gate threshold voltage* v gs(th) 1.0 1.0 v v ds = v gs ,i d = 250a drain-source leakage i dss 30 30 a v ds = 24v, v gs = 0 current* 150 150 v ds = 24v, v gs = 0, tj = 100c gate-source leakage i gss 100 100 na v gs = 12v current* total gate chg cont fet* q g 66.7 86.6 19 23 v gs =5v, i d =15a, v ds =16v total gate chg sync fet* q g 59.6 77.5 17 20.5 v gs = 5v, v ds < 100mv pre-vth q gs1 14 2.7 v ds = 16v, i d = 15a gate-source charge post-vth q gs2 4 1.3 nc gate-source charge gate to drain charge q gd 12.2 4.5 switch chg(q gs2 + q gd )* q sw 18.4 24 5.8 7.0 output charge* q oss 25 30 26 31 v ds = 16v, v gs = 0 gate resistance r g 1.5 1.9 w turn-on delay time t d (on) 17 10 v dd = 16v, i d = 15a rise time t r 10 5 ns v gs = 5v turn-off delay time t d (off) 39 19 clamped inductive load fall time t f 19 8 input capacitance c iss C 7300 C C 1800 C output capacitance c oss C 900 C C 900 C pf v ds = 16v, v gs = 0 reverse transfer capacitance c rss C 350 C C 60 C electrical characteristics source-drain rating & characteristics irf7809 IRF7811 current* charge ? notes: ? repetitive rating; pulse width limited by max. junction temperature. ? pulse width 300 s; duty cycle 2%. ? when mounted on 1 inch square copper board, t < 10 sec. ? typ = measured - q oss * devices are 100% tested to these parameters.
www.irf.com 3 irf7809/IRF7811 so-8 package outline part marking information
www.irf.com 4 irf7809/IRF7811 so-8 tape & reel information dimensions are shown in millimeters (inches) 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are show n in millimeters(inches). 3. outline conforms to eia-481 & eia-541. world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 252-7105 ir great britain: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t 3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir japan: k&h bldg., 2f, 3-30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo 171-0021 japan tel: 81 3 3983 0086 ir southeast asia: 1 kim seng promenade,great world city west tower, 13-11,singapore 237994 tel:65 838 4630 ir taiwan : 16f, suite b, 319, sec.2, tun hwa south road, taipei 10673, taiwan, r.o.c. tel : 886-2-2739-4230 http://www.irf.com/ data and specifications subject to change without notice. 1/00
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